Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process

摘要

A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing process and the electrical response of the metal–semiconductor contact are characterized.